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QS8J11 -12v pch +pch middle power mosfet datasheet ll outline v dss -12v tsmt8 r ds(on) (max.) 43m i d 3.5a p d 1.5w ll features ll inner circuit 1) low on - resistance. 2) -1.5v drive. 3) built-in g-s protection diode. 4) small surface mount package(tsmt8) 5) pb-free lead plating ; rohs compliant ll packaging specifications type packing embossed tape ll application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 3000 taping code tr marking j11 ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss -12 v continuous drain current i d 3.5 a pulsed drain current i d,pulse *1 12 a gate - source voltage v gss 0 -8 v power dissipation total p d *2 1.5 w element 1.25 total p d *3 0.7 junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient total r thja *2 - - 83.3 /w element - - 100 total r thja *3 - - 178 ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = -1ma -12 - - v breakdown voltage temperature coefficient v (br)dss i d = -1ma - -5.0 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -12v, v gs = 0v - - -10 a gate - source leakage current i gss v ds = 0v, v gs = -8v - - -10 a gate threshold voltage v gs(th) v ds = -6v, i d = -1ma -0.3 - -1.0 v gate threshold voltage temperature coefficient v gs(th) i d = -1ma - 2.7 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = -4.5v, i d = -3.5a - 31 43 m v gs = -2.5v, i d = -1.7a - 41 57 v gs = -1.8v, i d = -1.7a - 55 82 v gs = -1.5v, i d = -0.7a - 75 150 gate input resistance r g f = 1mhz, open drain - 10 - forward transfer admittance |y fs | *4 v ds = -6v, i d = -3.5a 5 - - s www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 2600 - pf output capacitance c oss v ds = -6v - 170 - reverse transfer capacitance c rss f = 1mhz - 150 - turn - on delay time t d(on) *4 v dd ? -6v,v gs = -4.5v - 15 - ns rise time t r *4 i d = -1.7a - 30 - turn - off delay time t d(off) *4 r l = 3.5 - 170 - fall time t f *4 r g = 10 - 60 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? -6v - 22 - nc gate - source charge q gs *4 i d = -3.5a - 3.8 - gate - drain charge q gd *4 v gs = -4.5v - 3.0 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - -1 a body diode pulse current i sp *1 - - -12 forward voltage v sd *4 v gs = 0v, i s = -3.5a - - -1.2 v *1 pw Q 10s , duty cycle Q 1% *2 mounted on a ceramic board (30300.8mm) *3 mounted on a fr4 (20200.8mm) *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature fig.8 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic curves fig. 9 gate threshold voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current fig.11 drain current derating curve fig.12 static dr ain - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic curves fig. 1 3 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic curves fig. 1 5 static drain - source on - state resistance vs. drain current (ii) fig.16 static drain - source on - state resistance vs. drain current (lii) fig.17 static drain - source on - state resistance vs. drain current (iv) fig.18 static drain - source on - state resistance vs. drain current (v) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll electrical characteristic curves fig. 1 9 typical capacitance vs. drain - source voltage fig.20 switching characteristics fig.21 dynamic input characteristics fig.22 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll measurement circuits fig. 1-1 switching time measurement circuit fig. 1-2 switching waveforms fig. 2-1 gate charge measurement circuit fig. 2-2 ga te charge waveform ll notice this product might cause chip aging and breakdown u nder the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150730 - rev.001 downloaded from: http:///
QS8J11 datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150730 - rev.001 downloaded from: http:///
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